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1SV322 Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer 1SV322
Beschreibung TOSHIBA Diode Silicon Epitaxial Planar Type
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 3 Seiten
1SV322 Datasheet, Funktion
TCXO/VCO
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV322
· High capacitance ratio: C1 V/C4 V = 4.3 (typ.)
· Low series resistance: rs = 0.4 (typ.)
· Useful for small size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
VR
Tj
Tstg
Rating
10
125
-55~125
Unit
V
°C
°C
1SV322
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
VR
IR
C1 V
C4 V
C1 V/C4 V
rs
IR = 1 mA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
¾
VR = 4 V, f = 100 MHz
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking
JEDEC
JEITA
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Min Typ. Max Unit
10 ¾ ¾
V
¾ ¾ 3 nA
26.5 ¾ 29.5 pF
6.0 ¾ 7.1 pF
4.0 4.3 ¾
¾
¾ 0.4 0.8 W
1 2003-03-24





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