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PDF 1SV314 Data sheet ( Hoja de datos )
| Número de pieza | 1SV314 | |
| Descripción | DIODE (VCO FOR UHF BAND RADIO) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SV314
1SV314
VCO for UHF Band Radio
z High Capacitance Ratio : C0.5 V / C2.5 V = 2.5 (Typ.)
z Low Series Resistance : rs = 0.35 Ω (Typ.)
z Useful for Small Size Tuner
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
Junction Temperature
Storage Temperature Range
VR 10 V
Tj 125 °C
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
JEDEC
—
JEITA
—
TOSHIBA
1−1G1A
Weight:0.0014g (typ.)
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
Reverse Voltage
Reverse Current
Capacitance
Capacitance
Capacitance Ratio
Series Resistance
SYMBOL
TEST CONDITION
VR
IR
C0.5 V
C2.5 V
C0.5 V /
C2.5 V
rs
IR = 1μA
VR = 10 V
VR = 0.5 V, f = 1 MHz
VR = 2.5 V, f = 1 MHz
—
VR = 1 V, f = 470 MHz
Marking
MIN TYP. MAX UNIT
10 — —
V
— — 3 nA
7.3 — 8.4 pF
2.75 — 3.4 pF
2.4 2.5
—
—
— 0.35 0.45 Ω
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1SV314.PDF ] | |
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