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PDF 1SV313 Data sheet ( Hoja de datos )
| Número de pieza | 1SV313 | |
| Descripción | DIODE (VCO FOR UHF BAND RADIO) | |
| Fabricantes | Toshiba Semiconductor | |
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TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE
1SV313
VCO FOR UHF BAND RADIO
l High Capacitance Ratio : C0.5V/C2.5V = 2.5 (Typ.)
l Low Series Resistance : rs = 0.35Ω (Typ.)
l Useful for Small Size Tuner
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
VR
Tj
Tstg
RATING
10
125
−55~125
UNIT
V
°C
°C
1SV313
Unit in mm
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
JEDEC
EIAJ
TOSHIBA
—
—
1−1E1A
CHARACTERISTIC
Reverse Voltage
Reverse Current
Capacitance
Capacitance
Capacitance Ratio
Series Resistance
MARKING
SYMBOL
TEST CONDITION
VR
IR
C0.5 V
C2.5 V
C0.5 V/
C2.5 V
rs
IR = 1µA
VR = 10 V
VR = 0.5 V, f = 1 MHz
VR = 2.5 V, f = 1 MHz
—
VR = 1 V, f = 470 MHz
MIN. TYP. MAX. UNIT
10 — ― V
― ― 3 nA
7.3 ― 8.4 pF
2.75 ― 3.4 pF
2.4 2.5 — —
― 0.35 0.45 Ω
000707EAA2
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
2001-03-09 1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1SV313.PDF ] | |
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