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Número de pieza | IRFP1405PBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! PD - 95509A
IRFP1405PbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
G
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 5.3mΩ
S ID = 95A
S
GD
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÃIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC Junction-to-Case *
Rθcs Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient *
HEXFET® is a registered trademark of International Rectifier.
* Rθ is measured at TJ approximately 90°C
www.irf.com
Max.
160
110
95
640
310
2.0
± 20
530
1060
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.24
–––
Max.
0.49
–––
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
08/18/10
1 page IRFP1405PbF
200
LIMITED BY PACKAGE
150
100
50
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
2.5
ID = 95A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
1
D = 0.50
0.1
0.01
0.001
0.0001
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
τCτ
Ri (°C/W) τi (sec)
0.2529 0.00080
0.2368 0.014283
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRFP1405PBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFP1405PBF | Power MOSFET ( Transistor ) | International Rectifier |
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