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Teilenummer | 1SV279 |
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Beschreibung | VARIABLE CAPACITANCE DIODE (VCO FOR V/UHF BAND RADIO) | |
Hersteller | Toshiba Semiconductor | |
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Gesamt 3 Seiten TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV279
1SV279
VCO for V/UHF Band Radio
• High capacitance ratio: C2 V/C10 V = 2.5 (typ.)
• Low series resistance: rs = 0.2 Ω (typ.)
• Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
VR 15 V
Tj 125 °C
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Symbol
Test Condition
VR
IR
C2 V
C10 V
C2 V/C10 V
rs
IR = 1 μA
VR = 15 V
VR = 2 V, f = 1 MHz
VR = 10 V, f = 1 MHz
⎯
VR = 5 V, f = 470 MHz
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Min Typ. Max Unit
15 ⎯ ⎯
V
⎯ ⎯ 3 nA
14 ⎯ 16 pF
5.5 ⎯ 6.5 pF
2.0 2.5
⎯
⎯
⎯ 0.2 0.4 Ω
1 2007-11-01
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ 1SV279 Schematic.PDF ] |
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