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1SV271 Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer 1SV271
Beschreibung Silicon epitaxial planar type diode
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 3 Seiten
1SV271 Datasheet, Funktion
TOSHIBA Diode Silicon Epitaxial Pin Type
1SV271
1SV271
VHF to UHF Band RF Attenuator Applications
Useful for small size tuner
Small total capacitance: CT = 0.25 pF (typ.)
Low series resistance: rs = 3 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Forward current
Junction temperature
Storage temperature range
VR 50 V
IF 50 mA
Tj 125 °C
Tstg
55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Series resistance
Symbol
VR
IR
VF
CT
rs
Test Condition
IR = 10 μA
VR = 50 V
IF = 50 mA
VR = 50 V, f = 1 MHz
IF = 10 mA, f = 100 MHz
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Min Typ. Max Unit
50 ⎯ ⎯
⎯ ⎯ 0.1
0.93 1.0
0.25 0.4
3
V
μA
V
pF
Ω
Start of commercial production
1993-06
1 2014-03-01





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