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PDF 1SV172 Data sheet ( Hoja de datos )
| Número de pieza | 1SV172 | |
| Descripción | DIODE (VHF~UHF BAND RF ATTENUATOR APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1SV172 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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TOSHIBA Diode Silicon Epitaxial Pin Type
1SV172
1SV172
VHF~UHF Band RF Attenuator Applications
• Useful for small size tuner
• Small total capacitance: CT = 0.25 pF (typ.)
• Low series resistance: rs = 3 Ω (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Forward current
Junction temperature
Storage temperature range
VR 50 V
IF 50 mA
Tj 125 °C
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Series resistance
VR IR = 10 μA
IR VR = 50 V
VF IF = 50 mA
(Note) CT VR = 50 V, f = 1 MHz
rs IF = 10 mA, f = 100 MHz
Note: CT is measured by 3 terminal method with capacitance bridge.
Marking
Unit: mm
JEDEC
―
JEITA
SC-59
TOSHIBA
1-3G1G
Weight: 0.013 g (typ.)
Min Typ. Max Unit
50 ⎯ ⎯
⎯ ⎯ 0.1
⎯ 0.95 ⎯
⎯ 0.25 ⎯
⎯3⎯
V
μA
V
pF
Ω
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1SV172.PDF ] | |
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