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PDF 1SS391 Data sheet ( Hoja de datos )
| Número de pieza | 1SS391 | |
| Descripción | Silicon Epitaxial Schottky Barrier Type Diode | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS391
1SS391
Low Voltage High Speed Switching
z Low forward voltage
z Small package
: VF (2) = 0.23V (typ.) @IF = 5mA
: SC-61
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
Topr
15
10
200 *
100 *
1*
150 *
125
−55 to 125
−40 to 100
V
V
mA
mA
A
mW
°C
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
JEDEC
―
JEITA
SC-61
TOSHIBA
2-3J1A
Weight: 0.013g (typ.)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
― IF = 1mA
― IF = 5mA
― IF = 100mA
― VR = 10V
― VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.18 ―
V
― 0.23 0.30 V
― 0.35 0.50 V
― ― 20 μA
― 20 40 pF
Marking
Start of commercial production
1994-10
1 2014-03-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1SS391.PDF ] | |
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