|
|
Número de pieza | 1SS383 | |
Descripción | Silicon epitaxial planar type diode | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 1SS383 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS383
1SS383
Low Voltage High Speed Switching
Small package
Composed of 2 independent diodes.
Low forward voltage: VF (3) = 0.54V (typ.)
Low reverse current: IR = 5μA (max)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
VRM
VR
IFM
IO
IFSM
P
45
40
300 *
100 *
1*
100 *
V
V
mA
mA
A
mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
JEDEC
―
Operating temperature range
Topr
−40 to 100
°C
JEITA
TOSHIBA
―
1-2U1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.006g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test Condition
IF = 1mA
IF = 10mA
IF = 100mA
VR = 40V
VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.28 ―
V
― 0.36 ―
V
― 0.54 0.60
V
― ― 5 μA
― 18 25 pF
Pin Assignment (Top View)
Marking
Start of commercial production
1994-09
1 2015-01-15
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 1SS383.PDF ] |
Número de pieza | Descripción | Fabricantes |
1SS380 | Switching diode | ROHM Semiconductor |
1SS380 | Silicon Epitaxial Planar Diode | MDD |
1SS380 | Silicon Epitaxial Planar Diode | Galaxy Electrical |
1SS380 | SWITCHING DIODE | Kexin |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |