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MTB11N03BV8 Schematic ( PDF Datasheet ) - CYStech Electronics

Teilenummer MTB11N03BV8
Beschreibung N-Channel Logic Level Enhancement Mode Power MOSFET
Hersteller CYStech Electronics
Logo CYStech Electronics Logo 




Gesamt 9 Seiten
MTB11N03BV8 Datasheet, Funktion
CYStech Electronics Corp.
Spec. No. : CA00V8
Issued Date : 2015.05.25
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB11N03BV8 BVDSS
ID @ TC=25°C, VGS=10V
30V
44A
ID @ TA=25°C, VGS=10V
14A
RDSON(TYP)
VGS=10V, ID=14A 7.3mΩ
VGS=4.5V, ID=12A 11.2mΩ
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB11N03BV8
Outline
Pin 1
DFN3×3
GGate DDrain SSource
Ordering Information
Device
MTB11N03BV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB11N03BV8
CYStek Product Specification






MTB11N03BV8 Datasheet, Funktion
CYStech Electronics Corp.
Spec. No. : CA00V8
Issued Date : 2015.05.25
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
50
VDS=10V
40
30
20
10
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
300
TJ(MAX)=150°C
250 TA=25°C
RθJA=36°C/W
200
150
100
50
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0
0.0001 0.001
0.01 0.1
1
Pulse Width(s)
1
D=0.5
Transient Thermal Response Curves
10 100
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=36°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTB11N03BV8
CYStek Product Specification

6 Page







SeitenGesamt 9 Seiten
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