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Teilenummer | MTB11N03BQ8 |
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Beschreibung | N-Channel Logic Level Enhancement Mode Power MOSFET | |
Hersteller | CYStech Electronics | |
Logo | ||
Gesamt 9 Seiten CYStech Electronics Corp.
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB11N03BQ8 BVDSS
ID@VGS=10V, TA=25°C
RDSON(typ)@VGS=10V, ID=12A
RDSON(typ)@VGS=4.5V, ID=12A
30V
12A
8.8mΩ
12.8mΩ
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free and Halogen-free package
Symbol
MTB11N03BQ8
Outline
Pin 1
SOP-8
G:Gate D:Drain S:Source
Ordering Information
Device
MTB11N03BQ8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating & halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB11N03BQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
48
VDS=10V
40
32
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
300
TJ(MAX)=150°C
250 TA=25°C
RθJA=40°C/W
200
24 150
16 100
8 50
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0
0.0001 0.001
0.01 0.1
1
Pulse Width(s)
10 100
Transient Thermal Response Curves
10
1
D=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.001
1.E-04
1.E-03
Single Pulse
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=40°C/W
1.E+01
1.E+02
1.E+03
MTB11N03BQ8
CYStek Product Specification
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ MTB11N03BQ8 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
MTB11N03BQ8 | N-Channel Logic Level Enhancement Mode Power MOSFET | CYStech Electronics |
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