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PDF 1SS368 Data sheet ( Hoja de datos )
| Número de pieza | 1SS368 | |
| Descripción | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS368
Ultra High Speed Switching Application
Small package
Low forward voltage
: VF (3) = 0.98V (typ.)
Fast reverse recovery time: trr = 1.6ns (typ.)
Small total capacitance : CT = 0.5pF (typ.)
1SS368
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Maximum (peak) reverse voltage
VRM
85
Reverse voltage
VR 80
Maximum (peak) forward current
IFM
200
Average forward current
IO 100
Surge current (10ms)
IFSM
1
Power dissipation
P 150 *
Junction temperature
Tj 125
Storage temperature range
Tstg −55∼125
* : Mounted on a glass epoxy circuit board of 20 × 20mm,
pad dimension of 4 × 4mm.
Unit
V
V
mA
mA
A
JEDEC
mW EIAJ
°C TOSHIBA
°C Weight: 1.9mg
―
―
1-1F1A
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 30V
― VR = 80V
― VR = 0, f = 1MHz
― IF = 10mA, Fig.1
Min Typ. Max Unit
― 0.62 ―
― 0.75 ―
V
― 0.98 1.20
― ― 0.1 µA
― ― 0.5
― 0.5 3.0 pF
― 1.6 4.0 ns
961001EAA2
• TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of
the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure
of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please
ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications.
Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
2000-09-14 1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1SS368.PDF ] | |
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