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PDF 1SS362 Data sheet ( Hoja de datos )
| Número de pieza | 1SS362 | |
| Descripción | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS362
Ultra High Speed Switching Application
z Small package
z Low forward voltage
: VF(3) = 0.97 V (typ.)
z Fast reverse recovery time : trr = 1.6 ns (typ.)
z Small total capacitance : CT = 0.5 pF (typ.)
1SS362
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current
IFM
240 *
mA
Average forward current
IO 80 * mA
Surge current (10ms)
IFSM
1* A
Power dissipation
P 100 mW
Junction temperature
Tj 125 °C
SSM
Storage temperature
Tstg
−55 to 125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
JEITA
TOSHIBA
Weight: 2.4 mg (typ.)
―
1-2S1C
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 30V
― VR = 80V
― VR = 0, f = 1MHz
― IF = 10mA, Fig.1
Min Typ. Max Unit
― 0.63 ―
― 0.75 ―
V
― 0.97 1.20
― ― 0.1
μA
― ― 0.5
― 0.5 3.0 pF
― 1.6 4.0 ns
1 2009-06-24
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 1SS362.PDF ] | |
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