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BLF2425M6LS180P Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer BLF2425M6LS180P
Beschreibung Power LDMOS transistor
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 12 Seiten
BLF2425M6LS180P Datasheet, Funktion
BLF2425M6L180P;
BLF2425M6LS180P
Power LDMOS transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for various applications such as ISM and industrial
heating at frequencies from 2400 MHz to 2500 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS
PL(AV)
Gp
(MHz)
(mA) (V) (W)
(dB)
CW
2450
10
28 180
13.3
D
(%)
53.5
1.2 Features and benefits
Easy power control
Integrated ESD protection
High efficiency
Excellent thermal stability
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency
range such as ISM and industrial heating.






BLF2425M6LS180P Datasheet, Funktion
NXP Semiconductors
BLF2425M6L(S)180P
Power LDMOS transistor
7.4 Graphical data

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3/ :

      
3/ G%P
VDS = 28 V; IDq = 10 mA.
(1) f = 2400 MHz
(2) f = 2450 MHz
(3) f = 2500 MHz
Fig 3. Power gain and drain efficiency as function of
load power; typical values
VDS = 28 V; IDq = 10 mA.
(1) f = 2400 MHz
(2) f = 2450 MHz
(3) f = 2500 MHz
Fig 4. Power gain and drain efficiency as function of
load power; typical values
BLF2425M6L180P_25M6LS180P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
6 of 12

6 Page









BLF2425M6LS180P pdf, datenblatt
NXP Semiconductors
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation . . . . . . . . . 3
7.2 Impedance information . . . . . . . . . . . . . . . . . . . 4
7.3 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.4 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Handling information. . . . . . . . . . . . . . . . . . . . . 9
10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Contact information. . . . . . . . . . . . . . . . . . . . . 11
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
BLF2425M6L(S)180P
Power LDMOS transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 12 July 2013
Document identifier: BLF2425M6L180P_25M6LS180P

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