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PDF 1SS307 Data sheet ( Hoja de datos )
| Número de pieza | 1SS307 | |
| Descripción | DIODE (GENERAL PURPOSE RECTIFIER APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1SS307 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS307
General Puropose Rectifier Applications
1SS307
Unit: mm
z Low forward voltage
z Low reverse current
z Small total capacitance
z Small package
: VF = 1.0V (typ.)
: IR = 0.1nA (typ.)
: CT = 3.0pF (typ.)
: SC−59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
VRM
VR
IFM
IO
IFSM
P
35 V
30 V
300 mA
100 mA
1A
150 mW
Junction temperature
Tj
125 °C JEDEC
TO−236MOD
Storage temperature
Tstg −55 to 125 °C JEITA
SC−59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
1−3G1B
Weight: 12 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF
IR
CT
Test
Circuit
Test Condition
― IF = 100mA
― VR = 30V
― VR = 0, f = 1MHz
Min Typ. Max Unit
― 1.0 1.3 V
― ― 10 nA
― 3.0 6.0 pF
Marking
Start of commercial production
1988-05
1 2014-03-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1SS307.PDF ] | |
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