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Teilenummer | 1SS226 |
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Beschreibung | SILICON EPITAXIAL PLANAR DIODE | |
Hersteller | Toshiba Semiconductor | |
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Gesamt 5 Seiten Switching Diodes Silicon Epitaxial Planar
1SS226
1. Applications
• Ultra-High-Speed Switching
2. Packaging and Internal Circuit
1SS226
S-Mini
1: Anode 1
2: Cathode 2
3: Cathode1 / Anode 2
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage
VRM
85 V
Reverse voltage
VR
80
Peak forward current
IFM (Note 1)
300 mA
Average rectified current
IO (Note 1)
100
Power dissipation
PD (Note 2)
150 mW
Non-repetitive peak forward surge current
IFSM (Note 1), (Note 3)
2
A
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Unit rating. Total rating = Unit rating × 70%
Note 2: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Note 3: Measured with a 10 ms pulse.
Start of commercial production
1982-09
1 2015-01-08
Rev.2.0
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ 1SS226 Schematic.PDF ] |
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