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1SS193 Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer 1SS193
Beschreibung SILICON EPITAXIAL PLANAR DIODE
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 3 Seiten
1SS193 Datasheet, Funktion
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS193
Ultra High Speed Switching Application
1SS193
Unit: mm
Small package
: SC-59
Low forward voltage
: VF (3) = 0.9V (typ.)
Fast reverse recovery time : trr = 1.6ns (typ.)
Small total capacitance : CT = 0.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current
IFM
300 mA
Average forward current
IO 100 mA
Surge current (10ms)
IFSM
2A
Power dissipation
Junction temperature
Storage temperature range
P 150 mW
Tj 125 °C JEDEC
Tstg
55 to 125
°C
JEITA
TOSHIBA
-
SC-59
1-3G1B
Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.012g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test Condition
IF =1mA
IF = 10mA
IF = 100mA
VR = 30V
VR = 80V
VR = 0, f = 1MHz
IF = 10mA (Fig.1)
Min Typ. Max Unit
0.60
0.72
V
0.90 1.20
― ― 0.1
μA
― ― 0.5
0.9 3.0 pF
1.6 4.0 ns
Marking
Start of commercial production
1982-05
1 2014-08-25





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