PDF MJE13003-P Data sheet ( Hoja de datos )

Número de pieza	MJE13003-P
Descripción	NPN SILICON TRANSISTOR
Fabricantes	Unisonic Technologies
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No Preview Available ! UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ Tc=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tc = 290ns @ 1A, 100°C. * 700V blocking capability APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits ORDERING INFORMATION Ordering Number Lead Free Halogen-Free - MJE13003G-P-x-AB3-K MJE13003L-P-x-T60-K MJE13003G-P-x-T60-K MJE13003L-P-x-T6C-A-K MJE13003G-P-x-T6C-A-K MJE13003L-P-x-T6C-F-K MJE13003G-P-x-T6C-F-K MJE13003L-P-x-T6S-K MJE13003G-P-x-T6S-K MJE13003L-P-x-T92-B MJE13003G-P-x-T92-B MJE13003L-P-x-T92-K MJE13003G-P-x-T92-K MJE13003L-P-x-T92-R MJE13003G-P-x-T92-R MJE13003L-P-x- T9N -B MJE13003G-P-x-T9N-B MJE13003L-P-x- T9N -K MJE13003G-P-x-T9N-K MJE13003L-P-x- T9N -R MJE13003G-P-x-T9N-R MJE13003L-P-x-TM3-T MJE13003G-P-x-TM3-T MJE13003L-P-x-TN3-R MJE13003G-P-x-TN3-R Note: Pin assignment: B: Base C: Collector E: Emitter Package SOT-89 TO-126 TO-126C TO-126C TO-126S TO-92 TO-92 TO-92 TO-92NL TO-92NL TO-92NL TO-251 TO-252 Pin Assignment 123 BCE BCE ECB BCE BCE ECB ECB ECB ECB ECB ECB BCE BCE Packing Tape Box Bulk Bulk Bulk Bulk Tape Box Bulk Tape Reel Tape Box Bulk Tape Reel Tube Tape Reel MJE13003L-P-x-T6C-A-K (1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Green Package (1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube (2) refer to Pin Assignment (for TO-126C) (3) T60: TO-126, T6C:TO-126C, T6S: TO-126S T92: TO-92, T9N: TO-92NL, TM3: TO-251, TN3: TO-252 (4) x: refer to Classification of hFE1 (5) L: Lead Free, G: Halogen Free and Lead Free www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 9 QW-R204-027.F 1 page MJE13003-P NPN SILICON TRANSISTOR APPLICATION INFORMATION Table 1.Test Conditions for Dynamic Performance Reverse Bias Safe Operating Area and Inductive Switching +5V Vcc 5V Pw DUTY CYCLE 10% tR, tF 10ns 1N4933 33 MJE210 0.001μF 33 1N4933 2N2222 68 1k 1k +5V RB IB 1N4933 0.02μF 270 Note: PW and Vcc Adjusted for Desired Ic RB Adjusted for Desired IB1 1k T.U.T. 2N2905 MJE200 47 100 1/2W -VBE(OFF) L MR826 Ic Vclamp SELECTED FOR 5.1k VCE 51 1kV Coil Data : VCC=20V Ferroxcube core #6656 Vclamp=300V Full Bobbin ( ~ 200 Turns) #20 GAP for 30 mH/2 A Lcoil=50mH Output Waveforms Resistive Switching +125V Rc TUT RB SCOPE D1 -4.0V VCC=125V RC=125Ω D1=1N5820 or Equiv. RC=47Ω +10.3 V 25μS 0 -8.5V tr, tf<10ns Duty Cycly=1.0% RB and Rc adjusted for desired IB and Ic Table 2. Typical Inductive Switching Performance Ic Tc tsv tRV tFI tTI tc (A) (°C) (µs) (µs) (µs) (µs) (µs) 0.5 25 100 1.3 1.6 0.23 0.30 0.35 0.30 0.26 0.30 0.40 0.36 1 25 1.5 0.10 0.14 0.05 0.16 100 1.7 0.13 0.26 0.06 0.29 1.5 25 100 1.8 3 0.07 0.10 0.05 0.16 0.08 0.22 0.08 0.28 Note: All Data Recorded in the Inductive Switching Circuit in Table 1 ICPK VCLAMP 90% Vclamp 90% Ic IC tsv tRV tFI tTI VCE IB 90% IB1 tc 10% VCLAMP 10% ICPK 2% Ic Time Fig.1 Inductive Switching Measurements UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 9 QW-R204-027.F 5 Page

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