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Teilenummer | SL1002 |
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Beschreibung | Audio Frequency Power Amplifier | |
Hersteller | IK Semiconductor | |
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Gesamt 4 Seiten TECHNICAL DATA
Audio Frequency Power Amplifier
Features
● Low Speed Switching
SOT-223
SL1002
Emitter Collector Base
123
SL1002
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Tc=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP *Collector Current (Pulse)
IB Base Current (DC)
PC
Rθja
Collector Dissipation
Junction to Ambient
(TC=25°C)
Rθjc
Junction to Case
TJ Junction Temperature
TSTG
Storage Temperature
* PW≤10ms, Duty Cycle≤50%
Value
40
30
5
3
7
0.6
10
132
13.5
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°C/W
°C/W
°C
°C
Electrical Characteristics Tc=25°C unless otherwise noted
Characteristics
DC Current Gain (1), (2)
DC Current Gain (1), (2)
Symbol
hFE
hFE
Unit
Measurement Mode
Vce =2V, Ic =20mA
Vce = 2V, Ic = 1A
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Emitter Cut-off Current
Icbo μA Vcb = 30V, Ie = 0
Icbo μA Vcb = 40V, Ie = 0
Iebo μA Veb = 3V, Ic = 0
Iebo μA Veb = 5V, Ic = 0
Collector-Emitter
Saturation Voltage (1)
Vce (sat)
Ic = 2A, Ib = 0.2A
V
Ic = 0.8 A, Ib = 0.02 A
Base-Emitter
Saturation Voltage (1)
Vbe (sat)
V Ic = 2A, Ib = 0.2A
(1) Pulse Test : Pulse Width ≤ 300㎲. Duty Cycle ≤ 2%
(2) Measurement mode for a network with common base : Vcb = 1V, Ie=Ic
Min Max
30
60 400
1.0
100
1.0
100
0.5
0.1
2.0
* Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these or any other conditions beyond those
indicated under “recommended operating conditions” is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2011, February, Rev. 01
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ SL1002 Schematic.PDF ] |
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