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PDF 6HN04MH Data sheet ( Hoja de datos )
| Número de pieza | 6HN04MH | |
| Descripción | N-Channel Silicon MOSFET | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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6HN04MH
Ordering number : ENA0365A
6HN04MH
Features
• 4V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
When mounted on ceramic substrate (900mm2✕0.8mm)
Ratings
60
±20
200
800
0.6
150
--55 to +150
Unit
V
V
mA
mA
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : FB
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=100mA
ID=100mA, VGS=10V
ID=50mA, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
min
60
1.2
140
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
240 mS
1.8 2.4 Ω
2.6 3.7 Ω
27 pF
8.6 pF
4.4 pF
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
6HN04MH/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 6HN04MH.PDF ] | |
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