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MMSF1308 Schematic ( PDF Datasheet ) - ON Semiconductor

Teilenummer MMSF1308
Beschreibung Power MOSFET ( Transistor )
Hersteller ON Semiconductor
Logo ON Semiconductor Logo 




Gesamt 9 Seiten
MMSF1308 Datasheet, Funktion
MMSF1308
Preferred Device
Power MOSFET
7 Amps, 30 Volts
NChannel SO8
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the draintosource
diode has a very low reverse recovery time. MiniMOSt devices are
designed for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dcdc converters,
and power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
High Speed Switching Provides High Efficiency for DC/DC
Converter
Miniature SO8 Surface Mount Package Saves Board Space
Diode Exhibits High Speed, With Soft Recovery
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Max
DraintoSource Voltage
DraintoGate Voltage (RGS = 1.0 MΩ)
GatetoSource Voltage Continuous
Continuous Drain Current @ TA = 25°C
(Note 1.)
Pulsed Drain Current (Note 2.)
Total Power Dissipation @ TA = 25°C
(Note 1.)
VDSS
VDGR
VGS
ID
IDM
PD
30
30
± 20
7.0
50
2.5
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
Unit
Vdc
Vdc
Vdc
Adc
W
°C
THERMAL RESISTANCE
JunctiontoAmbient (Note 1.)
RθJA
50 °C/W
1. When mounted on 1square FR4 or G10 board
(VGS = 10 V, @ 10 Seconds)
2. Repetitive rating; pulse width limited by maximum junction temperature.
http://onsemi.com
7 AMPERES
30 VOLTS
RDS(on) = 30 mW
NChannel
D
G
S
MARKING
DIAGRAM
SO8
8
CASE 751
STYLE 12
1
S1308
LYWW
L = Location Code
Y = Year
WW = Work Week
PIN ASSIGNMENT
Source
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Device
Package
Shipping
MMSF1308R2
SO8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
Publication Order Number:
MMSF1308/D






MMSF1308 Datasheet, Funktion
MMSF1308
di/dt = 300 A/μs
Standard Cell Density
trr
High Cell Density
trr
ta
tb
t, TIME
Figure 10. Reverse Recovery Time (trr)
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance
General Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 μs. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) TC)/(RθJC).
A power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
nonlinearly with an increase of peak current in avalanche
and peak junction temperature.
100
VGS = 10 V
SINGLE PULSE
TC = 25°C
10
100 ms
1 ms
10 ms
1
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
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