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PDF FDD6688S Data sheet ( Hoja de datos )
| Número de pieza | FDD6688S | |
| Descripción | 30V N-Channel PowerTrench SyncFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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May 2004
FDD6688S
30V N-Channel PowerTrench SyncFET™
General Description
The FDD6688S is designed to replace a single TO-252
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDD6688S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
• DC/DC converter
• Motor Drives
Features
• 88 A, 30 V.
RDS(ON) = 5.1 mΩ @ VGS = 10 V
RDS(ON) = 6.3 mΩ @ VGS = 4.5 V
• Low gate charge (31 nC typical)
• Fast switching
• High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Ratings
30
± 20
88
100
69
3.1
1.3
–55 to +150
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
1.8
40
96
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6688S
FDD6688S
D-PAK (TO-252)
Reel Size
13’’
Tape width
12mm
Units
V
A
W
°C
°C/W
Quantity
2500 units
2004 Fairchild Semiconductor Corporation
FDD6688 Rev C (W)
1 page  
Typical Characteristics
10
ID = 88A
8
6
4
VDS = 10V
20V
15V
2
0
0 10 20 30 40 50
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
60
1000
100
RDS(ON) LIMIT
10
1
100us
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1
SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area
5000
4000
f = 1MHz
VGS = 0 V
3000
Ciss
2000
Coss
1000
Crss
0
0 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
50
SINGLE PULSE
40
RθJA = 96°C/W
TA = 25°C
30
20
10
0
0.001
0.01
0.1 1
10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
RθJA(t) = r(t) * RθJA
RθJA = 96 °C/W
P(pk
t1
TJ - TAt=2 P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDS6688S Rev C (W)
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDD6688S.PDF ] | |
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