Datenblatt-pdf.com


FDD6676AS Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FDD6676AS
Beschreibung 30V N-Channel PowerTrench SyncFET
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 8 Seiten
FDD6676AS Datasheet, Funktion
FDD6676AS
30V N-Channel PowerTrench® SyncFET
April 2008
tm
General Description
The FDD6676AS is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDD6676AS
includes a patented combination of a MOSFET
monolithically integrated with a Schottky diode using
Fairchild’s monolithic SyncFET technology.
Applications
DC/DC converter
Low side notebook
Features
90 A, 30 V
RDS(ON) = 5.7 m@ VGS = 10 V
RDS(ON) = 7.1 m@ VGS = 4.5 V
Includes SyncFET schottky body diode
Low gate charge (46nC typical)
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
RoHS Compliant
D
G
S
DTO-P-2A5K2
(TO-252)
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6676AS
FDD6676AS
13’’
D
G
S
Ratings
30
±20
90
100
70
3.1
1.3
–55 to +150
1.8
40
96
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDD6676AS Rev A1(X)






FDD6676AS Datasheet, Funktion
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDD6676AS.
TIME : 12.5ns/div
Figure 12. FDD6676AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDD6676A).
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.1
0.01
TA = 125oC
0.001
TA = 100oC
0.0001
0.00001
0
TA = 25oC
5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
30
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
TIME : 12.5ns/div
Figure 13. Non-SyncFET (FDD6676A) body
diode reverse recovery characteristic.
FDD6676AS Rev A1(X)

6 Page







SeitenGesamt 8 Seiten
PDF Download[ FDD6676AS Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
FDD6676AS30V N-Channel PowerTrench SyncFETFairchild Semiconductor
Fairchild Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche