|
|
Teilenummer | FDD6676AS |
|
Beschreibung | 30V N-Channel PowerTrench SyncFET | |
Hersteller | Fairchild Semiconductor | |
Logo | ||
Gesamt 8 Seiten FDD6676AS
30V N-Channel PowerTrench® SyncFET™
April 2008
tm
General Description
The FDD6676AS is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDD6676AS
includes a patented combination of a MOSFET
monolithically integrated with a Schottky diode using
Fairchild’s monolithic SyncFET technology.
Applications
• DC/DC converter
• Low side notebook
Features
• 90 A, 30 V
RDS(ON) = 5.7 mΩ @ VGS = 10 V
RDS(ON) = 7.1 mΩ @ VGS = 4.5 V
• Includes SyncFET schottky body diode
• Low gate charge (46nC typical)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• RoHS Compliant
D
G
S
DTO-P-2A5K2
(TO-252)
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6676AS
FDD6676AS
13’’
D
G
S
Ratings
30
±20
90
100
70
3.1
1.3
–55 to +150
1.8
40
96
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDD6676AS Rev A1(X)
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDD6676AS.
TIME : 12.5ns/div
Figure 12. FDD6676AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDD6676A).
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.1
0.01
TA = 125oC
0.001
TA = 100oC
0.0001
0.00001
0
TA = 25oC
5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
30
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
TIME : 12.5ns/div
Figure 13. Non-SyncFET (FDD6676A) body
diode reverse recovery characteristic.
FDD6676AS Rev A1(X)
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ FDD6676AS Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
FDD6676AS | 30V N-Channel PowerTrench SyncFET | Fairchild Semiconductor |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |