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FDS6675A Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FDS6675A
Beschreibung 30V P-Channel PowerTrench MOSFET
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 5 Seiten
FDS6675A Datasheet, Funktion
February 2003
FDS6675A
30V P-Channel PowerTrenchMOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 25V).
Applications
Power management
Load switch
Battery protection
Features
–11 A, –30 V
RDS(ON) = 13 m@ VGS = –10 V
RDS(ON) = 19 m@ VGS = –4.5 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
DD
DD
DD
DD
SO-8
Pin 1 SO-8 SS SS SS GG
54
63
72
81
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6675A
FDS6675A
13’’
Ratings
–30
±25
–11
–50
2.5
1.2
1
–55 to +175
50
125
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
2003 Fairchild Semiconductor Corporation
FDS6675A Rev C (W)





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