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Teilenummer | SSF2122E |
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Beschreibung | 20V Dual N-Channel MOSFET | |
Hersteller | GOOD-ARK | |
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Gesamt 8 Seiten Main Product Characteristics
VDSS
20V
RDS(on) 15.2mohm(typ.)
ID 7A ①
DFN 3x3-8L
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
SSF2122E
20V Dual N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V(Silicon Limited)
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
7①
5①
42
1.4
20
± 12
-55 to + 150
Units
A
W
V
V
°C
www.goodark.com
Page 1 of 8
Rev.1.0
SSF2122E
20V Dual N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure9. Maximum Drain Current Vs. Case Temperature
Figure10. Forward Current Vs. Diode Forward Voltage
Figure11. Power Dissipation Vs. Case Temperature
www.goodark.com
Page 6 of 8
Rev.1.0
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ SSF2122E Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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