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Teilenummer | K2958 |
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Beschreibung | MOSFET ( Transistor ) - 2SK2958 | |
Hersteller | Hitachi Semiconductor | |
Logo | ||
Gesamt 9 Seiten 2SK2958(L),2SK2958(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 5.5mΩ typ.
• 4V gate drive devices.
• High speed switching
Outline
LDPAK
D
G
S
ADE-208-568B (Z)
3rd. Edition
Jun 1998
44
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
2SK2958(L),2SK2958(S)
Reverse Drain Current vs.
Source to Drain Voltage
100
10 V
80
5V
60
VGS = 0, –5 V
40
20
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
10 µ
100 µ
q ch – c(t) = g s (t) • q ch – c
q ch – c = 1.25 °C/W, Tc = 25 °C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
6
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ K2958 Schematic.PDF ] |
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