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Número de pieza | WPM2031 | |
Descripción | Single P-Channel Power MOSFET | |
Fabricantes | WillSEMI | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de WPM2031 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! WPM2031
WPM2031
Single P-Channel, -20V, -0.65A, Power MOSFET
Http://www.sh-willsemi.com
VDS (V)
-20
Rds(on) (Ω)
0.495@ VGS=–4.5V
0.665@ VGS=–2.5V
0.882@ VGS=–1.8V
ESD Protected
Descriptions
The WPM2031 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM2031 is Pb-free and
Halogen-free.
Features
D
S
G
SOT-723
D
3
12
GS
Pin configuration (Top view)
3
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-723
Applications
1*
1
2
1 =Device Code
* = Month(A~Z)
Marking
Order information
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Device
WPM2031-3/TR
Package
SOT-723
Shipping
8000/Reel&Tape
Will Semiconductor Ltd.
1
2015/08/24- Rev. 1.2
1 page WPM2031
120
VGS=0V
f=100KHZ
90
60
Cin
Cout
30 Crss
0
0 2 4 6 8 10
-VDS - Drain to Source Voltage (V)
Capacitance
4.5
4.0 VDS=-10V,ID=-0.45A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
- Qg (nC)
Gate Charge Characteristics
250
200
T=1250C
150
100
T=250C
50
0.4 0.5 0.6 0.7 0.8 0.9
-VSD - Source to Drain Voltage(V)
Body diode forward voltage
10
1
10 ms
0.1
Limited by RDS(on)
0.01
100 ms
1s
10 s
DC
0.001
TA = 25 °C
Single Pulse
0.1 1 10
-VDS - Drain-to-Source Voltage (V)
100
Safe operating power
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 345 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd.
5
2015/08/24- Rev. 1.2
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet WPM2031.PDF ] |
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