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WPM2015 Schematic ( Datenblatt PDF ) - WillSEMI

Teilenummer WPM2015
Beschreibung Single P-Channel Power MOSFET
Hersteller WillSEMI
Logo WillSEMI Logo 

Gesamt 7 Seiten
		
WPM2015 Datasheet, Funktion
WPM2015
Single P-Channel, -20V, -2.4A, Power MOSFET
VDS (V)
-20
Rds(on) (ȍ)
0.081@ VGS=4.5V
0.103@ VGS=2.5V
Descriptions
The WPM2015 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM2015 is Pb-free and
Halogen-free.
WPM2015
Http://www.sh-willsemi.com
SOT-23
D
3
12
GS
Pin configuration (Top view)
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
3
WT1*
12
WT1= Device Code
* = Month (A~Z)
Marking
Order information
Device
Package
Shipping
WPM2015-3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd.
1
2015/08/25 – Rev. 1.1






WPM2015 Datasheet, Funktion
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
WPM2015
10-2
10-1
1
Square Wave Pulse Duration (s)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 1 2 0 ° C / W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 1000
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd.
6
2015/08/25 – Rev. 1.1

6 Page


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