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WPM2014 Schematic ( Datenblatt PDF ) - WillSEMI

Teilenummer WPM2014
Beschreibung Single P-Channel Power MOSFET
Hersteller WillSEMI
Logo WillSEMI Logo 

Gesamt 7 Seiten
		
WPM2014 Datasheet, Funktion
WPM2014
WPM2014
Single P-Channel, -20V, -4.9A, Power MOSFET
Http//:www.sh-willsemi.com
VDS (V)
-20
Rds(on) (Ω)
0.050 @ VGS=4.5V
0.063 @ VGS=2.5V
0.074 @ VGS=1.8V
Descriptions
The WPM2014 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WPM2014 is Pb-free.
Features
DFN2x2-6L
D DS
6 54
D
S
1 23
D DG
Pin configuration (Top view)
6 54
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN2x2-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
WLSI
SYWW
1 23
WLSI = Company code
S = Device code
Y = Year (Last digit)
WW = Week
Marking
Order information
Device
Package
Shipping
WPM2014-6/TR DFN2x2-6L 3000/Reel&Tape
Will Semiconductor Ltd.
1 Oct, 2013-Rev.1.3






WPM2014 Datasheet, Funktion
Package outline dimensions
DFN2x2-6L
WPM2014
Symbol
A
A1
A3
D
E
D2
E2
D3
E3
b
L
e
Will Semiconductor Ltd.
Min.
0.70
0.00
1.95
1.95
0.85
0.95
0.25
0.51
0.25
0.25
Dimensions in millimeter
Typ.
0.75
-
0.20 Ref.
2.00
2.00
0.90
1.00
0.30
0.56
0.30
0.30
0.65 BSC.
6
Max.
0.80
0.05
2.05
2.05
0.95
1.05
0.35
0.61
0.35
0.30
Oct, 2013-Rev.1.3

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