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WPM2009D Schematic ( Datenblatt PDF ) - WillSEMI

Teilenummer WPM2009D
Beschreibung P-MOSFET
Hersteller WillSEMI
Logo WillSEMI Logo 

Gesamt 7 Seiten
		
WPM2009D Datasheet, Funktion
WPM2009D
-20V, -4A, 42mŸ, 2.0W, DFN3x3, P-MOSFET
Descriptions
This single P-Channel MOSFET is produced
using trench process that provides minimum on
resistance performance. WPM2009D is
enhancement power MOSFET with 2.0W power
dissipation mounting 1 in2 pad in a DFN3x3
package. This device is suited for high power
charging circuit of mobile phone application. It
also can be used in a high power switching
application.
WPM2009D
Http://www.willsemi.com
Bottom
DFN3x3-8L
Bottom
Features
z Max Rds(on) 42mŸ @ Vgs=-4.5V
z Max Vds
-20V
z Max Current
-4.0A
z Typical Vgs(th) -0.65V @ Id=-250uA
z Power Dissipation 2.0W (Note2)
z High performance Trench process
z DFN3x3-8L Package
z Pb-Free
Applications
z Battery charging
z Load Switch
z Power Switch
z DC-DC converter
Pin Connection
Top
WPM2009 = Part Number
YY = Year
WW = Week
Marking
Order Information
Device
Package
Shipping
WPM2009D-8/TR DFN3x3-8L 3000/Tape&Reel
Will Semiconductor Ltd.
1
Jan,2012 - Rev. 1.4






WPM2009D Datasheet, Funktion
Package Outline Dimension
DFN3x3-8L
WPM2009D
Top View
Bottom View
Symbol
A
A1
A3
D
E
D1
E1
k
b
e
L
Side View
Min.
0.7
0.00
2.9
2.9
2.2
1.4
0.18
0.375
Will Semiconductor Ltd.
Dimensions in millimeters
0.203 Ref.
0.200 Min.
0.650 Typ.
Max.
0.8
0.05
3.1
3.1
2.4
1.6
0.3
0.575
6 Jan,2012 - Rev. 1.4

6 Page


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