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QM2517C1 Schematic ( Datenblatt PDF ) - UBIQ

Teilenummer QM2517C1
Beschreibung Dual P-Ch 20V Fast Switching MOSFETs
Hersteller UBIQ
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Gesamt 4 Seiten
		
QM2517C1 Datasheet, Funktion
QM2517C1
Dual P-Ch 20V Fast Switching MOSFETs
General Description
The QM2517C1 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The QM2517C1 meet the RoHS and Green
Product requirement with full function reliability
approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Product Summery
BVDSS
-20V
RDSON
240m
ID
-1A
Applications
z High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
SOT363 (SC-70-6L ) Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ -4.5V1
Continuous Drain Current, VGS @ -4.5V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
Rating
-20
±12
-1
-0.8
-5
0.33
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Typ.
---
---
Max.
375
240
Unit
/W
/W
Rev A.02 D071811
1


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