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QM2507W Schematic ( Datenblatt PDF ) - UBIQ

Teilenummer QM2507W
Beschreibung Dual P-Ch 20V Fast Switching MOSFETs
Hersteller UBIQ
Logo UBIQ Logo 

Gesamt 4 Seiten
		
QM2507W Datasheet, Funktion
QM2507W
Dual P-Ch 20V Fast Switching MOSFETs
General Description
Product Summery
The QM2507W is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The QM2507W meet the RoHS and Green
Product requirement with full function reliability
approved.
Features
BVDSS
-20V
RDSON
80m
ID
-3.2A
Applications
z High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
TSSOP8 Pin Configuration
G2
S2
S2
D2
G1
S1
S1
D1
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ -4.5V1
Continuous Drain Current, VGS @ -4.5V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Rating
-20
±8
-3.2
-2.6
-13
1.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
110
70
Unit
/W
/W
Rev A.02 D051611
1


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