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Número de pieza | MUR40060CT | |
Descripción | Silicon Super Fast Recovery Diode | |
Fabricantes | GeneSiC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MUR40060CT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types up to 600 V VRRM
MUR40040CT thru MUR40060CTR
VRRM = 50 V - 600 V
IF = 400 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MUR40040CT (R)
MUR40060CT (R)
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
VRRM
VRMS
VDC
IF
TC ≤ 125 °C
400
280
400
400
600
420
600
400
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
IF,SM TC = 25 °C, tp = 8.3 ms
Tj
Tstg
2400
-40 to 175
-40 to 175
2400
-40 to 175
-40 to 175
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Recovery Time
Maximum reverse recovery
time
Thermal characteristics
Thermal resistance, junction
VF IF = 125 A, Tj = 25 °C
IR
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 125 °C
TRR
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
RthJC
MUR40040CT (R)
1.5
25
3
150
0.14
MUR40060CT (R)
1.7
25
3
180
0.14
Unit
V
V
V
A
A
°C
°C
Unit
V
μA
mA
nS
°C/W
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Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MUR40060CT.PDF ] |
Número de pieza | Descripción | Fabricantes |
MUR40060CT | Silicon Super Fast Recovery Diode | GeneSiC |
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