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Teilenummer | QM0008G |
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Beschreibung | N-Ch 100V Fast Switching MOSFETs | |
Hersteller | UBIQ | |
Logo | ||
Gesamt 4 Seiten QM0008G
N-Ch 100V Fast Switching MOSFETs
General Description
Product Summery
The QM0008G is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The QM0008G meet the RoHS and Green Product
requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
BVDSS
100V
RDSON
310mΩ
ID
2.2A
Applications
z High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
SOT223 Pin Configuration
D
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
G DS
Rating
100
±20
2.2
1.7
5.5
1.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
85
36
Unit
℃/W
℃/W
Rev A.02 D042511
1
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ QM0008G Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
QM0008D | N-Ch 100V Fast Switching MOSFETs | UBIQ |
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QM0008K | N-Ch 100V Fast Switching MOSFETs | UBIQ |
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