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Teilenummer | KIA2N60H |
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Beschreibung | N-CHANNEL MOSFET | |
Hersteller | KIA | |
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Gesamt 6 Seiten KIA
SEMICONDUCTORS
2.0A, 600V
N-CHANNEL MOSFET
2N60H
1.Description
The KIA2N60H N-Channel enhancement mode silicon gate power MOSFET is designed for
high voltage, high speed power switching applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
2. Features
RDS(ON)=4.1Ω@VGS=10V.
Low gate charge (typical 9nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
3. Pin configuration
Pin
1
2
3
4
1 of 6
Function
Gate
Drain
Source
Drain
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
2.0A, 600V
N-CHANNEL MOSFET
2N60H
6 of 6
Rev 1.1 JAN 2014
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ KIA2N60H Schematic.PDF ] |
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