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PDF B745 Data sheet ( Hoja de datos )

Número de pieza B745
Descripción PNP Transistor - 2SB745
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! B745 Hoja de datos, Descripción, Manual

Transistor
2SB745, 2SB745A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SD661 and 2SD661A
s Features
q Low noise voltage NV.
q High foward current transfer ratio hFE.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SB745
base voltage 2SB745A
Collector to 2SB745
emitter voltage 2SB745A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–35
–55
–35
–55
–5
–200
–50
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base
voltage
2SB745
2SB745A
ICBO
ICEO
VCBO
VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
–100 nA
–1 µA
–35
V
–55
Collector to emitter 2SB745
voltage
2SB745A
VCEO
IC = –2mA, IB = 0
–35
–55
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
VEBO
hFE*
VCE(sat)
VBE
fT
Noise voltage
NV
IE = –10µA, IC = 0
–5
V
VCB = –5V, IE = 2mA
180 700
IC = –100mA, IB = –10mA
– 0.6
V
VCE = –1V, IC = –100mA
– 0.7 –1
V
VCB = –5V, IE = 2mA, f = 200MHz
150 MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100k, Function = FLAT
150 mV
*hFE Rank classification
Rank
R
hFE 180 ~ 360
S
260 ~ 520
T
360 ~ 700
1

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