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STL24N60M2 Schematic ( PDF Datasheet ) - STMicroelectronics

Teilenummer STL24N60M2
Beschreibung N-channel Power MOSFET
Hersteller STMicroelectronics
Logo STMicroelectronics Logo 




Gesamt 15 Seiten
STL24N60M2 Datasheet, Funktion
STL24N60M2
N-channel 600 V, 0.186 Ω typ., 18 A MDmesh II Plus™ low Qg
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet production data
Features
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Figure 1. Internal schematic diagram
D(3)
G(1)
S(2)
AM01476v1
Order code VDS @ TJmax RDS(on) max ID
STL24N60M2
650 V
0.21 Ω 18 A
Extremely low gate charge
Lower RDS(on) x area vs previous generation
Low gate input resistance
100% avalanche tested
Zener protected
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Order code
STL24N60M2
Table 1. Device summary
Marking
Package
24N60M2
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
February 2014
This is information on a product in full production.
DocID024777 Rev 2
1/15
www.st.com
15






STL24N60M2 Datasheet, Funktion
Electrical characteristics
STL24N60M2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
ID AM15659v1
(A)
Figure 3. Thermal impedance
K
d=0.5
Zth PowerFLAT 8x8 HV
10
10µs
100 µs
1 1ms
0.1
0.1
1
Tj=150°C
Tc=25°C
Single pulse
10ms
10 100 VDS(V)
Figure 4. Output characteristics
ID
(A) VGS=8, 9, 10V
AM15660v1
40 7V
35
30
25 6V
20
15
10 5V
5
0 4V
0 5 10 15 20 VDS(V)
Figure 6. Normalized V(BR)DSS vs temperature
V(BR)DSS
(norm)
ID=1 mA
AM15662v1
1.09
1.07
1.05
1.03
1.01
0.99
0.97
0.95
0.93
-50 -25
0
25 50 75 100 125 TJ(°C)
0.2
0.1
10-1
0.01
0.05
0.02
Single pulse
c
10-2
10-5
10-4 10-3 10-2 tp(s)
Figure 5. Transfer characteristics
ID (A)
45
40
VDS=17V
AM15661v1
35
30
25
20
15
10
5
0
0 2 4 6 8 10 VGS(V)
Figure 7. Static drain-source on-resistance
R DS(on)
(Ω)
0.194
VGS=10 A
AM15663v1
0.192
0.190
0.188
0.186
0.184
0.182
0.180
0.178
0 2 4 6 8 10 12 14 16 ID(A)
6/15 DocID024777 Rev 2

6 Page









STL24N60M2 pdf, datenblatt
Packaging mechanical data
5 Packaging mechanical data
T (0.30±0.05)
Figure 22. PowerFLAT™ 8x8 HV tape
D0 ( 1.55±0.05)
P2 (2.0±0.1)
P0 (4.0±0.1)
D1 ( 1.5 Min)
STL24N60M2
E (1.75±0.1)
K0 (1.10±0.1)
P1 (12.00±0.1)
A0 (8.30±0.1)
Note: Base and Bulk quantity 3000 pcs
8229819_Tape_revA
Figure 23. PowerFLAT™ 8x8 HV package orientation in carrier tape.
12/15
DocID024777 Rev 2

12 Page





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