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Teilenummer | BC858 |
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Beschreibung | PNP Silicon Planar Epitaxial Transistors | |
Hersteller | RECTRON | |
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Gesamt 2 Seiten PNP Silicon Planar Epitaxial Transistors
BC856
BC857
BC858
Pin configuration:
1. BASE
2. EMITTER
3. COLLECTOR
3
1
2
Unit: inch (mm)
Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emmitter Voltage (+VBE = 1V)
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current - Peak
Emitter Current - Peak
Base Current - Peak
Total power dissipation up to
Tamb = 60 oC
Storge Temperature
Junction Temperature
SYMBOL
VCBO
VCEX
VCEO
VEBO
IC
ICM
IEM
IBM
Ptot**
Tstg
Tj
BC856
80
80
65
Thermal Resistance
From junction to tab
From tab to soldering points
From soldering points to ambient
Rth(j-t)
Rth(t-s)
Rth(s-a)**
**Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm
BC857
50
50
45
5
100
200
200
200
250
-55 to +150
150
60
280
90
BC858
30
30
30
UNITS
V
V
V
V
mA
mA
mA
mW
oC
oC
K/W
www.rectron.com
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ BC858 Schematic.PDF ] |
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