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Teilenummer | BC846T |
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Beschreibung | NPN general purpose transistors | |
Hersteller | Philips | |
Logo | ||
Gesamt 14 Seiten BC846/BC546 series
65 V, 100 mA NPN general-purpose transistors
Rev. 06 — 7 February 2006
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
Table 1: Product overview
Type number [1] Package
Philips
BC846
SOT23
BC846W
SOT323
BC846T
SOT416
BC546A [2]
SOT54
BC546B [2]
SOT54
JEITA
-
SC-70
SC-75
SC-43A
SC-43A
JEDEC
TO-236AB
-
-
TO-92
TO-92
PNP
complement
BC856
BC856W
BC856T
BC556A
BC556B
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
s General-purpose transistors
s SMD plastic packages
s Two different gain selections
1.3 Applications
s General-purpose switching and amplification
1.4 Quick reference data
Table 2:
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
hFE group A
hFE group B
Conditions
open base
VCE = 5 V;
IC = 2 mA
Min Typ Max Unit
- - 65 V
- - 100 mA
110 -
450
110 180 220
200 290 450
Philips Semiconductors
BC846/BC546 series
65 V, 100 mA NPN general-purpose transistors
400
hFE
300
200
100
(1)
(2)
(3)
mgt723
0
10−1
1
10 102 103
IC (mA)
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 1. Selection A: DC current gain as a function of
collector current; typical values
103
VCEsat
(mV)
mgt725
102
(1)
(2)
(3)
10
10−1
1
10 102 103
IC (mA)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. Selection A: Collector-emitter saturation
voltage as a function of collector current;
typical values
1200
VBE
(mV)
1000
800
600
400
(1)
(2)
(3)
mgt724
200
0
10−1
1
10 102 103
IC (mA)
VCE = 5 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 2. Selection A: Base-emitter voltage as a function
of collector current; typical values
1200
VBEsat
(mV)
1000
800
600
400
(1)
(2)
(3)
mgt726
200
0
10−1
1
10 102 103
IC (mA)
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 4. Selection A: Base-emitter saturation voltage as
a function of collector current; typical values
BC846_BC546_SER_6
Product data sheet
Rev. 06 — 7 February 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
6 of 14
6 Page Philips Semiconductors
BC846/BC546 series
65 V, 100 mA NPN general-purpose transistors
11. Revision history
Table 10: Revision history
Document ID
Release date Data sheet status Change notice Doc. number Supersedes
BC846_BC546_SER_6
Modifications:
20060207 Product data sheet -
-
BC846_BC847_
BC848_5
BC846T_847T_
SERIES_3
BC846W_BC847W_
BC848W_4
BC546_547_4
• The format of this data sheet has been redesigned to comply with the new presentation
and information standard of Philips Semiconductors.
• This data sheet is a type combination out of the previous data sheets
BC846_BC847_BC848_5, BC846T_847T_SERIES_3, BC846W_BC847W_BC848W_4
and BC546_547_4.
• Table 8 “Characteristics”: F redefined to NF noise figure
BC846_BC847_BC848_5 20040206
Product
specification
-
9397 750 12395 BC846_BC847_
BC848_4
BC846T_847T_SERIES_3 20001115
Product
specification
-
9397 750 07524 BC846T_847T_2
BC846W_BC847W_
BC848W_4
20020204
Product
specification
-
9397 750 09166 BC846W_847W_3
BC546_547_4
20041125
Product
specification
-
9397 750 13568 BC546_547_3
BC846_BC546_SER_6
Product data sheet
Rev. 06 — 7 February 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
12 of 14
12 Page | ||
Seiten | Gesamt 14 Seiten | |
PDF Download | [ BC846T Schematic.PDF ] |
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