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PDF uPA2791GR Data sheet ( Hoja de datos )
| Número de pieza | uPA2791GR | |
| Descripción | SWITCHING N- AND P-CHANNEL POWER MOS FET | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2791GR
SWITCHING
N- AND P-CHANNEL POWER MOS FET
DESCRIPTION
The μ PA2791GR is N- and P-channel MOS Field Effect
Transistors designed for switching application.
FEATURES
• Low on-state resistance
N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A)
RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
P-channel RDS(on)1 = 82 mΩ MAX. (VGS = −10 V, ID = −3.0 A)
RDS(on)2 = 110 mΩ MAX. (VGS = −4.5 V, ID = −3.0 A)
• Low gate charge
N-channel QG = 10 nC TYP. (VGS = 10 V)
P-channel QG = 8.3 nC TYP. (VGS = −10 V)
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit: mm)
85
N-channel 1 : Source 1
2 : Gate 1
7, 8 : Drain 1
P-channel 3 : Source 2
4 : Gate 2
5, 6 : Drain 2
14
5.37 MAX.
6.0 ± 0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ± 0.2
0.10
ORDERING INFORMATION
PART NUMBER
μ PA2791GR-E1-AT Note
μ PA2791GR-E2-AT Note
LEAD PLATING
Pure Sn
PACKING
Tape 2500
p/reel
PACKAGE
Power SOP8
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
EQUIVALENT CIRCUIT
N-channel
Drain
P-channel
Drain
Gate
Body
Diode
Gate
Body
Diode
Gate
Protection
Diode
Source
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge. VESD ± 600 V TYP. (C = 100 pF, R = 1.5 kΩ)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G18207EJ2V0DS00 (2nd edition)
Date Published November 2007 NS
2006, 2007
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1 page  
μ PA2791GR
TYPICAL CHARACTERISTICS (TA = 25°C)
(1) N-channel
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
10
1
0.1
0.01
ID(pulse)
PW
= 200
ID(DC)
DC
1i0 msi
μs
RDS((VonG) SL=im1ii t0edV )
Mounted on ceramic
Power Dissipation
substrate of
Limit ed
2000 mm2 x 1.6 mmt, 1 unit
TA = 25°C
Single pulse
0.01
0.1
1
10
1i00 msi
100
VDS - Drain to Source Voltage - V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.5
2 units
2
Mounted on ceramic
substrate of
2000 mm2 x 1.6 mmt
1.5 1 unit
1
0.5
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - °C
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Rth(ch-A) = 73.5°C/Wi
10
1
Mounted on ceramic substrate of 2000 mm2 x 1.6 mmt, 1 unit
TA = 25°C
Single pulse
0.1
100 μ
1m
10 m
100 m
1
PW - Pulse Width – s
10
100
1000
Data Sheet G18207EJ2V0DS
5
5 Page 
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
μ PA2791GR
Reel side
MARKING INFORMATION
−E1 TYPE
A2791
−E2 TYPE
Draw-out side
Lot code
1 pin mark
Pb-free plating marking
RECOMMENDED SOLDERING CONDITIONS
The μ PA2791GR should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Soldering Conditions
Infrared reflow
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
Recommended
Condition Symbol
IR60-00-3
P350
Data Sheet G18207EJ2V0DS
11
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