Datenblatt-pdf.com


MBRF3060CT Schematic ( PDF Datasheet ) - Taiwan Semiconductor

Teilenummer MBRF3060CT
Beschreibung Isolated 30.0 AMPS. Schottky Barrier Rectifiers
Hersteller Taiwan Semiconductor
Logo Taiwan Semiconductor Logo 




Gesamt 2 Seiten
MBRF3060CT Datasheet, Funktion
MBRF3035CT - MBRF30150CT
Isolated 30.0 AMPS. Schottky Barrier Rectifiers
ITO-220AB
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: ITO-220AB molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in-lbs. Max.
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBRF MBRF MBRF MBRF MBRF MBRF MBRF Units
3035 3045 3050 3060 3090 30100 30150
CT CT CT CT CT CT CT
Maximum Recurrent Peak Reverse Voltage
VRRM
35 45 50 60 90 100 150 V
Maximum Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at
TC=130oC
Total device
Per Leg
VRMS
VDC
I(AV)
24 31 35 42 63 70 105
35 45 50 60 90 100 150
30
15
V
V
A
Peak Repetitive Forward Current Per leg (Rated VR,
Square Wave, 20KHz) at Tc=130oC
IFRM
30 A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
200 A
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
IF=15A, Tc=25oC
IF=15A, Tc=125oC
IF=30A,
IF=30A,
Tc=25oC
Tc=125oC
IRRM
VF
1.0
0.70
0.60
0.82
0.73
0.75
0.65
0.5
0.84
0.70
0.94
0.82
0.95
0.80
1.05
0.92
A
V
Maximum Instantaneous Reverse Current
@ Tc=25 oC at Rated DC Blocking Voltage Per Leg
IR
0.2
0.2
@ Tc=125 oC (Note 2)
20 15
0.2 mA
10 mA
Voltage Rate of Change, (Rated VR)
dV/dt
1,000
V/uS
Typical Junction Capacitance
Maximum Thermal Resistance Per Leg (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
Cj
RθJC
TJ
TSTG
580 480
1.0
-65 to +150
-65 to +175
360
1.5
pF
oC/W
oC
oC
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink size (4”x6”x0.25”) Al-Plate.
- 160 -
Version: B07





SeitenGesamt 2 Seiten
PDF Download[ MBRF3060CT Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
MBRF3060CTSCHOTTKY BARRIER RECTIFIERSGOOD ELECTRONIC
GOOD ELECTRONIC
MBRF3060CT30A High Power Schottky Barrier RectifiersCITC
CITC
MBRF3060CTHigh Power Schottky DiodeVIKING TECH
VIKING TECH
MBRF3060CTSchottky Rectifier ( Diode )SANGDEST MICROELECTRONICS
SANGDEST MICROELECTRONICS
MBRF3060CTSchottky Barrier Rectifier ( Diode )GOOD-ARK
GOOD-ARK

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche