MBRF3030CT Schematic ( PDF Datasheet ) - Galaxy Microelectronics

Teilenummer	MBRF3030CT
Beschreibung	Schottky Barrier Rectifiers
Hersteller	Galaxy Microelectronics
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Gesamt 3 Seiten Production specification Schottky Barrier Rectifiers MBRF3030CT---MBRF30100CT FEATURES z High surge capacity. z For use in low voltage,high frequency Pb Lead-free Inverters,free wheeling,and polarity protect- tion applications. z Metal silicon junction,majority carrier conduction. z High current capacity,lowforward voltage drop. z Guard ring for over voltage protection. ITO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified MBRF MBRF MBRF MBRF MBRF MBRF MBRF Symbol Parameter 3030 3035 3040 3045 3050 3060 3080 CT CT CT CT CT CT CT VRRM Recurrent Peak Reverse Voltage 30 35 40 45 50 60 80 MBRF 30100 CT 100 Unit V VRMS RMS Voltage 21 25 28 32 35 42 56 70 V DC Blocking VDC Voltage 30 35 40 45 50 60 80 100 V IF(AV) IFSM RθJC Tj Tstg Average Forward Total Device Rectified Current @TA=100°C Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimposed on rated load Thermal Resistance(Note1) Operating Junction and StorageTem- perature Range 30 200 6.8 -55 to +150 A A 4.4 ℃/W ℃ Note:1.Thermal resistance from junction to case. S004 Rev.A www.gmicroelec.com 1
Seiten	Gesamt 3 Seiten
PDF Download	[ MBRF3030CT Schematic.PDF ]

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Besondere Datenblatt

Teilenummer	Beschreibung	Hersteller
MBRF3030CT	Schottky Barrier Rectifiers	Galaxy Microelectronics
MBRF3030CT	SCHOTTKY BARRIER RECTIFIER	MDD
MBRF3030CT	Schottky Rectifier ( Diode )	SANGDEST MICROELECTRONICS

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