|
|
Teilenummer | MBRF30150CT |
|
Beschreibung | 30A High Power Schottky Barrier Rectifiers | |
Hersteller | CITC | |
Logo | ![]() |
|
Gesamt 3 Seiten ![]() MBRF3040CT THRU MBRF30200CT
30A High Power Schottky Barrier Rectifiers
■ Features
■ Outline
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Suffix "G" indicates Halogen-free part, ex.MBRF3040CTG.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
ITO-220AB
0.408(10.36)
0.382(9.70)
0.189(4.80)
0.165(4.20)
0.130(3.30)
0.098(2.50)
0.138(3.50)
MAX
Marking code
123
0.339(8.60)
0.315(8.00)
0.600(15.5)
0.580(14.5)
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC ITO-220AB molded plastic body over
passivated chip.
• Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
• Polarity: Color band denotes cathode end.
• Mounting Position : Any.
• Weight : Approximated 2.25 gram.
0.055(1.4)
0.039(1.0)
0.067(1.7)
0.039(1.0)
0.035(0.90)
0.012(0.30)
0.171(4.35)MAX
0.114(2.90)
0.098(2.50)
0.512(13.0)
MIN
0.110(2.80)
0.091(2.30)
0.031(0.80)MAX
PIN 1
PIN 3
PIN 2
Dimensions in inches and (millimeters)
■ Maximum ratings and electrical characteristics
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Forward rectified current
Forward surge current
Reverse current
Diode junction capacitance
Thermal resistance
Storage temperature
Conditions
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
VR = VRRM TA = 25OC
VR = VRRM TA = 125OC
f=1MHz and applied 4V DC reverse voltage
Junction to ambient
Symbol
IO
IFSM
IR
CJ
RθJA
TSTG
MIN.
-55
TYP.
150
30
MAX.
30
200
0.1
10
+175
UNIT
A
A
mA
pF
OC/W
OC
Symbol
Marking code
Max.
repetitive peak
reverse voltage
VRRM (V)
MBRF3040CT MBRF3040CT
40
MBRF3045CT MBRF3045CT
45
MBRF3060CT MBRF3060CT
60
MBRF3065CT MBRF3065CT
65
MBRF30100CT MBRF30100CT
100
MBRF30150CT MBRF30150CT
150
MBRF30200CT MBRF30200CT
200
Max.
RMS voltage
VRMS (V)
28
31.5
42
45.5
70
105
140
Max. DC
blocking voltage
VR (V)
40
45
Max.
forward voltage
@15A, TA = 25OC
VF (V)
0.70
Max.
forward voltage
@15A, TA = 125OC
VF (V)
Operating
temperature
TJ (OC)
0.57
60 -55 ~ +150
0.79
0.70
65
100 0.81 0.71
150 0.87 0.77
-55 ~ +175
200 0.90 0.80
Document ID : DS-11K60
1 Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C2
| ||
Seiten | Gesamt 3 Seiten | |
PDF Download | [ MBRF30150CT Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
MBRF30150CT | SCHOTTKY BARRIER RECTIFIERS | ![]() GOOD ELECTRONIC |
MBRF30150CT | 30A High Power Schottky Barrier Rectifiers | ![]() CITC |
MBRF30150CT | High Power Schottky Diode | ![]() VIKING TECH |
MBRF30150CT | Schottky Rectifier ( Diode ) | ![]() SANGDEST MICROELECTRONICS |
MBRF30150CT | Schottky Barrier Rectifiers | ![]() Galaxy Microelectronics |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
![]() Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
![]() KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |