2SA1306A Schematic ( PDF Datasheet ) - INCHANGE

Teilenummer	2SA1306A
Beschreibung	Silicon PNP Power Transistors
Hersteller	INCHANGE
Logo
Gesamt 2 Seiten INCHANGE Semiconductor isc Silicon PNP Power Transistors DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B ·Complement to Type 2SC3298/A/B APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 2SA1306 2SA1306A 2SA1306B -160 -180 -200 V VCEO Collector-Emitter Voltage 2SA1306 2SA1306A 2SA1306B -160 -180 -200 V VEBO Emitter-Base Voltage IC Collector Current-Continuous IBB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -5 V -1.5 A -0.15 A 20 W 150 ℃ -55~150 ℃ isc Product Specification 2SA1306/A/B isc Website：www.iscsemi.cn
Seiten	Gesamt 2 Seiten
PDF Download	[ 2SA1306A Schematic.PDF ]

Link teilen

Besondere Datenblatt

Teilenummer	Beschreibung	Hersteller
2SA1306	PNP Transistor	Toshiba
2SA1306	SILICON POWER TRANSISTOR	SavantIC
2SA1306	Silicon PNP Power Transistors	INCHANGE
2SA1306A	PNP Transistor	Toshiba
2SA1306A	SILICON POWER TRANSISTOR	SavantIC

Teilenummer	Beschreibung	Hersteller
CD40175BC	Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.	Fairchild Semiconductor
KTD1146	EPITAXIAL PLANAR NPN TRANSISTOR.	KEC