2SA1306 Schematic ( PDF Datasheet ) - INCHANGE

Teilenummer	2SA1306
Beschreibung	Silicon PNP Power Transistors
Hersteller	INCHANGE
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Gesamt 2 Seiten INCHANGE Semiconductor isc Silicon PNP Power Transistors DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B ·Complement to Type 2SC3298/A/B APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 2SA1306 2SA1306A 2SA1306B -160 -180 -200 V VCEO Collector-Emitter Voltage 2SA1306 2SA1306A 2SA1306B -160 -180 -200 V VEBO Emitter-Base Voltage IC Collector Current-Continuous IBB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -5 V -1.5 A -0.15 A 20 W 150 ℃ -55~150 ℃ isc Product Specification 2SA1306/A/B isc Website：www.iscsemi.cn
Seiten	Gesamt 2 Seiten
PDF Download	[ 2SA1306 Schematic.PDF ]

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Besondere Datenblatt

Teilenummer	Beschreibung	Hersteller
2SA1300	TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS)	Toshiba Semiconductor
2SA1300	PNP EPITAXIAL SILICON TRANSISTOR	Unisonic Technologies
2SA1300	Plastic-Encapsulated Transistors	TRANSYS
2SA1300	PNP EPITAXIAL PLANAR TRANSISTOR	Dc Components
2SA1300	PNP Plastic Encapsulated Transistor	SeCoS

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