BAV70M Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer	BAV70M
Beschreibung	High-speed switching diodes
Hersteller	NXP Semiconductors
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Gesamt 16 Seiten BAV70 series High-speed switching diodes Rev. 8 — 18 March 2015 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP JEITA BAV70 SOT23 - BAV70M SOT883 SC-101 BAV70S SOT363 SC-88 BAV70T BAV70W SOT416 SOT323 SC-75 SC-70 JEDEC Package configuration TO-236AB small - leadless ultra small - very small - ultra small - very small Configuration dual common cathode dual common cathode quadruple common cathode/common cathode dual common cathode dual common cathode 1.2 Features and benefits  High switching speed: trr  4 ns  Low leakage current  Small SMD plastic packages  Low capacitance: Cd  1.5 pF  Reverse voltage: VR  100 V  AEC-Q101 qualified 1.3 Applications  High-speed switching  General-purpose switching 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage trr reverse recovery time Conditions VR = 80 V Min Typ - - [1] - - - - [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. Max 0.5 100 4 Unit A V ns NXP Semiconductors BAV70 series High-speed switching diodes 103 IF (mA) 102 006aab107 10 (1) (2) (3) (4) 1 10−1 0.2 0.6 1.0 1.4 VF (V) (1) Tamb = 150 C (2) Tamb = 85 C (3) Tamb = 25 C (4) Tamb = 40 C Fig 1. Forward current as a function of forward voltage; typical values 102 IR (μA) 10 (1) 006aab108 1 (2) 10−1 10−2 (3) 10−3 10−4 (4) 10−5 0 20 40 60 80 100 VR (V) (1) Tamb = 150 C (2) Tamb = 85 C (3) Tamb = 25 C (4) Tamb = 40 C Fig 3. Reverse current as a function of reverse voltage; typical values 102 IFSM (A) 10 mbg704 1 10−1 1 10 102 103 104 tp (μs) Based on square wave currents. Tj = 25 C; prior to surge Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values 0.8 Cd (pF) 0.6 mbg446 0.4 0.2 0 04 8 f = 1 MHz; Tamb = 25 C 12 VR (V) 16 Fig 4. Diode capacitance as a function of reverse voltage; typical values BAV70_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 — 18 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 6 of 16 6 Page NXP Semiconductors BAV70 series High-speed switching diodes 2.2 0.6 0.7 1.1 2.0 0.85 2 3 1 1.5 0.5 (3x) Dimensions in mm 0.6 (3x) 1.9 solder lands solder resist msa438 solder paste occupied area Fig 17. Reflow soldering footprint BAV70T (SOT416/SC-75) 2.65 0.75 1.325 1.30 2.35 0.85 0.60 (3×) 0.55 (3×) 2 3 1 2.40 0.50 (3×) 1.90 solder lands solder paste solder resist occupied area Dimensions in mm msa429 Fig 18. Reflow soldering footprint BAV70W (SOT323/SC-70) 4.60 4.00 1.15 2 3.65 2.10 3 1 2.70 0.90 (2×) preferred transport direction during soldering solder lands solder resist occupied area Dimensions in mm msa419 Fig 19. Wave soldering footprint BAV70W (SOT323/SC-70) BAV70_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 — 18 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 12 of 16 12 Page
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