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G40T120 Schematic ( PDF Datasheet ) - Infineon Technologies

Teilenummer G40T120
Beschreibung IGW40T120
Hersteller Infineon Technologies
Logo Infineon Technologies Logo 




Gesamt 13 Seiten
G40T120 Datasheet, Funktion
TrenchStop® Series
IGW40T120
Low Loss IGBT in TrenchStop® and Fieldstop technology
C
Short circuit withstand time – 10s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
E
PG-TO-247-3
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IGW40T120 1200V 40A
1.7V
150C G40T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150C
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
1200
75
40
105
105
20
10
270
-40...+150
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.4 Nov. 09






G40T120 Datasheet, Funktion
TrenchStop® Series
IGW40T120
td(off)
100ns tf
td(on)
10ns tr
1000 ns
td(off)
tf
100 ns
td(on)
tr
10 ns
1ns
0A
20A 40A 60A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=15Ω,
Dynamic test circuit in Figure E)
1 ns
    
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=40A,
Dynamic test circuit in Figure E)
td(off)
100ns
tf
td(on)
tr
10ns
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=40A, RG=15Ω,
Dynamic test circuit in Figure E)
7V
6V
5V max.
typ.
4V
min.
3V
2V
1V
0V
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 1.5mA)
Power Semiconductors
6
Rev. 2.4 Nov. 09

6 Page









G40T120 pdf, datenblatt
TrenchStop® Series
IGW40T120
Power Semiconductors
12
Rev. 2.4 Nov. 09

12 Page





SeitenGesamt 13 Seiten
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