G40T120 Schematic ( PDF Datasheet ) - Infineon Technologies

Teilenummer	G40T120
Beschreibung	IGW40T120
Hersteller	Infineon Technologies
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Gesamt 13 Seiten TrenchStop® Series IGW40T120 Low Loss IGBT in TrenchStop® and Fieldstop technology C  Short circuit withstand time – 10s  Designed for : - Frequency Converters - Uninterrupted Power Supply  TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior  NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)  Low EMI  Low Gate Charge  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ G E PG-TO-247-3 Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code IGW40T120 1200V 40A 1.7V 150C G40T120 Maximum Ratings Parameter Symbol Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE  1200V, Tj  150C Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC  1200V, Tj  150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s VCE IC ICpuls - VGE tSC Ptot Tj Tstg - Package PG-TO-247-3 Value 1200 75 40 105 105 20 10 270 -40...+150 -55...+150 260 Unit V A V s W C 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.4 Nov. 09 TrenchStop® Series IGW40T120 td(off) 100ns tf td(on) 10ns tr 1000 ns td(off) tf 100 ns td(on) tr 10 ns 1ns 0A 20A 40A 60A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=15Ω, Dynamic test circuit in Figure E) 1 ns      RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=40A, Dynamic test circuit in Figure E) td(off) 100ns tf td(on) tr 10ns 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=40A, RG=15Ω, Dynamic test circuit in Figure E) 7V 6V 5V max. typ. 4V min. 3V 2V 1V 0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.5mA) Power Semiconductors 6 Rev. 2.4 Nov. 09 6 Page TrenchStop® Series IGW40T120 Power Semiconductors 12 Rev. 2.4 Nov. 09 12 Page
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