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C6010 Schematic ( PDF Datasheet ) - Toshiba
| Teilenummer | C6010 |
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| Beschreibung | NPN Transistor - 2SC6010 | |
| Hersteller | Toshiba | |
| Logo |  |
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Gesamt 5 Seiten 
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6010
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
2SC6010
Unit: mm
• High speed switching: tf = 0.24μs (max) (IC = 0.3A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC
600 V
600 V
285 V
8V
1.0
A
2.0
0.5 A
1.0 W
1. Base
2. Collector
3. Emitter
JEDEC
JEITA
―
―
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
TOSHIBA
Weight:
2-7D101A
g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-13
Free Datasheet http://www.datasheet4u.com/
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| Seiten | Gesamt 5 Seiten | |
| PDF Download | [ C6010 Schematic.PDF ] | |
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