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MBR40100PT Schematic ( PDF Datasheet ) - Sirectifier
| Teilenummer | MBR40100PT |
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| Beschreibung | Schottky Barrier Diodes | |
| Hersteller | Sirectifier | |
| Logo |  |
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Gesamt 3 Seiten 
MBR40100PT
High Tjm (+175oC) Schottky Barrier Diodes
AC A
C(TAB)
A
C
A
A=Anode, C=Cathode, TAB=Cathode
MBR40100PT
VRRM
V
100
VDC
V
100
Dimensions TO-247AD
Dim. Millimeter
Min. Max.
A 19.81 20.32
B 20.80 21.46
C 15.75 16.26
D 3.55 3.65
E 4.32 5.49
F 5.4 6.2
G 1.65 2.13
H - 4.5
J 1.0 1.4
K 10.8 11.0
L 4.7 5.3
M 0.4 0.8
N 1.5 2.49
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
- 0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
Symbol
Characteristics
IF(AV) Maximum Average Forward Rectified Current @TC=145oC
IFSM
Peak Forward Surge Current 10ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR)
VFM
Maximum Forward
Voltage (Note 1)
IF=20A
IF=20A
IF=40A
IF=40A
@TJ=25 oC
@TJ=125oC
@TJ=25 oC
@TJ=125oC
Maximum Ratings
40
300
10000
0.77
0.61
0.91
0.75
IRM
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
@TJ=125oC
RthJC
CT
TJ
TSTG
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
1.25
15
1.25
600
-55 to +175
-55 to +175
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-247AD molded plastic
* Polarity: As marked on the body
* Weight: 0.2 ounces, 5.6 grams
* Mounting position: Any
Unit
A
A
V/us
V
mA
oC/W
pF
oC
oC
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| Seiten | Gesamt 3 Seiten | |
| PDF Download | [ MBR40100PT Schematic.PDF ] | |
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