MBR20200FCT Schematic ( PDF Datasheet ) - JIANGSU CHANGJIANG ELECTRONICS

Teilenummer	MBR20200FCT
Beschreibung	SCHOTTKY BARRIER RECTIFIER
Hersteller	JIANGSU CHANGJIANG ELECTRONICS
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Gesamt 2 Seiten JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Diodes MBR20100FCT, 150FCT, 200FCT SCHOTTKY BARRIER RECTIFIER TO-220F FEATURES z Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency z High Surge Capability 1. ANODE 2. CATHODE 3. ANODE z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter MBR20100FCT Value MBR20150FCT VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage 100 150 VR DC blocking voltage VR(RMS) RMS reverse voltage 70 105 BDTICIO Averagerectifiedoutputcurrent 20 MBR20200FCT 200 140 Unit V V A IFSM Non-Repetitive peak forward surge current 150 A 8.3ms half sine wave PD Power dissipation 2W RΘJA Thermal resistance from junction to ambient 50 ℃/W Tj Junction temperature 125 ℃ Tstg Storage temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Device Test conditions Min Typ Max Unit Reverse voltage V(BR) MBR20100FCT MBR20150FCT MBR20200FCT IR=1mA 100 150 200 V Reverse current MBR20100FCT IR MBR20150FCT MBR20200FCT MBR20100FCT VR=100V VR=150V VR=200V 0.1 0.1 mA 0.1 1 Forward voltage VF1 MBR20150FCT MBR20200FCT MBR20100FCT IF=10A 1V 1 1.2 VF2* MBR20150FCT MBR20200FCT IF=20A 1.2 V 1.2 *Pulst test www.BDTIC.com/jcst
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Besondere Datenblatt

Teilenummer	Beschreibung	Hersteller
MBR20200FCT	High Voltage Power Schottky Barrier Rectifier	MCC
MBR20200FCT	Power Schottky Rectifier	SIRECT
MBR20200FCT	DUAL SCHOTTKY BARRIER RECTIFIER	Power Silicon
MBR20200FCT	SCHOTTKY BARRIER RECTIFIER	JIANGSU CHANGJIANG ELECTRONICS
MBR20200FCT	10A/100V ~ 200V Schottky Barrier Rectifier	Gt Semi

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